Fabrication of Si3N4Nanocrystals and Nanowires Using PECVD
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چکیده
منابع مشابه
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Due to the high surface to volume silicon ratio and unique quasi onedimensional electronic structure, silicon nanowire based devices have properties that can outperform their traditional counterparts in many ways. To fabricate silicon nanowires, in principle there are a variety of different approaches. These can be classified into top-down and bottom-up methods. The choice of fabrication method...
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ژورنال
عنوان ژورنال: Advances in Materials Science and Engineering
سال: 2010
ISSN: 1687-8434,1687-8442
DOI: 10.1155/2010/892792